2
C4D40120D Rev. C
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF
= 20 A T
J=25°C
IF
= 20 A T
J=175°C
IR
Reverse Current
35
65
200
400
μA
VR
= 1200 V T
J=25°C
VR
= 1200 V T
J=175°C
QC
Total Capacitive Charge
130
nC
VR
= 1200 V, I
F
= 20A
di/dt
= 200 A/μs
TJ
= 25°C
C
Total Capacitance
1500
93
67
pF
VR
= 0 V, T
J
= 25°C, f = 1 MHz
VR
= 400 V, T
J
= 25?C, f = 1 MHz
VR
= 800 V, T
J
= 25?C, f = 1 MHz
1.Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
Thermal Resistance from Junction
to Case
0.29**
0.57*
°C/W
**
Per Device,
*
Per Leg
Typical Performance (Per Leg)
Figure 1. Forward Characteristics
0
5
10
15
20
25
30
35
40
0
1
2
3
4
Figure 2. Reverse Characteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
500
1000
1500
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ
=125°C
TJ
=175°C
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ
=125°C
TJ
=175°C
I
F
(A)
I
R
(mA)
VR
(V)
VF
(V)
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